AST RESEARCH, INC. INFORMATIONAL BULLETIN # 0031 02/25/97 TITLE: DIMM Substitution in AST Systems SUMMARY When attempting to use Dual In-line Memory Modules (DIMMs) from different systems keep in mind that all DIMMs are not necessarily interchangeable. Not all DIMMs are designed to the same technical specifications. DIMMs can require different operating voltages, use different memory architectures, contain a different number of pins, or include a number of other differences. Some DIMMs are keyed in two places, while others are keyed in three places, to prevent the user from installing DIMMs into the incorrect sockets. When viewed from the front, the leftmost key position indicates the type of Dynamic Random Access Memory (DRAM) module used (buffered, unbuffered, etc.) while the center key position denotes supply voltage (3.3V or 5V). This issue applies to all Manhattan S and Manhattan D systems. NOTES At the time this document was written, there were two families of AST server systems which use DIMMs: the Manhattan S series and the Manhattan D series and their derivatives. The Manhattan S series uses a 5V, 168 pin DIMM such as AST part number 104000-228 which is an IBM IBM11M4730CF (or equiv.) 4M x 72 (ECC-optimized). The corresponding part for a Manhattan D is a 3.3V, 168 pin DIMM, such as AST part number 104210-049 which is a Samsung KMM372F400BK-6 (or equiv.) 4M x 72 ECC/EDO. The above manufacturers' part numbers are used for illustrative purposes only. AST qualifies components from a number of different vendors so the components in your system could be different than those used in the above examples. If you are attempting to verify third-party DIMM compatibility in your system, refer to the appropriate manufacturer's data sheet for the particular DIMM in question. AST does not guarantee proper system operation, if unqualified memory is used. TAN N/A --------------------------------------------------------------------- The information in this data sheet is subject to change without notice. AST Research, Inc. shall not be liable for technical or editorial errors or omissions contained herein; nor for incidental or consequential damages resulting from the furnishing, performance, or use of this material. This material contains information protected by copyright. No part of this material may be reproduced in any form without prior written consent from AST Research, Inc. All rights reserved. --------------------------------------------------------------------- 01